PV04000 - SEMI PV40 - Test Method for In-Line Measurement of Saw Marks on PV Silicon Wafers by a Light Sectioning Technique Using Multiple Line Segments Revision:SEMI PV40-0513 - Current This Practice is not recommended

This Practice is not recommended for use in defect density evaluations

the bar code specifications

2 This standard specifies procedures to measure extractable metal impurities from perfluoroalkoxy alkane (PFA) and other fluorinated materials and from high purity liquid distribution components

Some device manufacturers may not require all the GEM capabilities due to differences in their factory automation strategies

SEMI F57-0301 (technical revision)

PV04000 - SEMI PV40 - Test Method for In-Line Measurement of Saw Marks on PV Silicon Wafers by a Light Sectioning Technique Using Multiple Line Segments Revision:SEMI PV40-0513 - Current This Practice is not recommendedSilicon (Si) wafers for PV applications cut from a Si ingot or Si brick contain a variety of micro and macroscopic crystallographic defects and flaws that may impact the efficiency of a solar cells or the yield of a manufacturing line. Theses defects can be categorized by their origin, either as grown in defects that are generated during the solidification of the Si ingot or as process induced defects that are generated by abrasive processes during